• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method of manufacturing an active matrix type organic light emitting display device and an organic light emitting display device according thereto are disclosed. In the method of manufacturing an organic light emitting display device according to the present invention, after forming a protective film on a substrate on which a thin film transistor is formed, forming a via hole connected to the thin film transistor, after applying a conductive material on the substrate, Forming a guide pattern on the first electrode connected to the via hole and the periphery of the first electrode by forming a pattern, forming an organic layer on the substrate, and then forming an organic layer pattern exposing the predetermined portion of the guide pattern; And heat-treating the substrate to a glass transition temperature (Tg) of the organic layer to deform the shape of the organic layer pattern. The organic light emitting display device according to the present invention comprises a thin film transistor on a substrate on which a thin film transistor is formed. A via hole provided in the passivation layer formed in the via to open the thin film transistor, and the thin film transistor through the via hole And a first electrode connected to the jitter, a guide pattern formed around the first electrode, and an organic layer pattern disposed on the guide pattern to open the inner part of the guide pattern. Therefore, there is an effect of improving the quality of the completed organic light emitting display device by removing the stitching.
    公开号:KR20030061514A
    申请号:KR1020020002042
    申请日:2002-01-14
    公开日:2003-07-22
    发明作者:권정현
    申请人:삼성에스디아이 주식회사；
    IPC主号:
    专利说明:

    Method for manufacturing organic light emitting display device and organic light emitting display device according to the present invention {METHOD FOR FORMMING ACTIVE MATRIX TYPE ORGANIC ELECTRO LUMINESCENCE DISPLAY AND ORGANIC ELECTRO LUMINESCENCE DISPLAY THERBY}
    [11] The present invention relates to a method of manufacturing an active matrix type organic light emitting display device and an organic light emitting display device according to the present invention, and more particularly, formed of a material such as acrylic and polyimide on a first electrode connected to a thin film transistor. The present invention relates to a method of manufacturing an active matrix type organic light emitting display device capable of preventing stitching from occurring after photolithography of an organic film, and an organic light emitting display device accordingly.
    [12] In general, an organic electroluminescence display (OELD) among flat panel displays has a wider operating temperature range than other flat panel displays, is resistant to shock and vibration, has a wide viewing angle, and a response speed. As it has advantages such as providing fast moving images, it is attracting attention as a next-generation flat panel display.
    [13] In the organic light emitting display device, light is generated by electrons and holes forming electron-hole pairs in a semiconductor, or when carriers are excited to a higher energy state and then fall back to a stabilized ground state. Use the phenomenon.
    [14] The organic light emitting diode may be classified into a passive matrix type requiring a separate driving source and an active matrix type having a thin film transistor functioning as a switching element. .
    [15] In the conventional method of manufacturing an active matrix type organic light emitting display device, as shown in FIG. 1, after forming a thin film transistor 14 on a substrate 10 by performing a series of semiconductor manufacturing processes, the thin film After forming the protective film 12 made of an oxide film on the substrate 10 on which the transistor 14 is formed, a via hole 16 is formed.
    [16] Next, after the conductive material such as indium tin oxide (ITO) is completely coated on the substrate 10 on which the via holes 16 are formed, a well-known photolithography process involving exposure, development, and etching processes is performed. One electrode 18 is formed.
    [17] In this case, in the photolithography process, the plurality of first electrodes 18 are formed on the substrate 10 by moving the substrate 10 and performing a plurality of exposure shots.
    [18] Subsequently, the entire surface of the substrate 10 is planarized by coating an organic film on the substrate 10 having the first electrode 18 formed thereon with an organic polymer material such as acryl or polyimide to form an organic film. Soft-bake the organic film at temperature.
    [19] Next, a known photolithography process involving exposure, development and etching is performed to form an organic film pattern 22 having an opening 22 for opening the first electrode.
    [20] In this case, in the photolithography process, a plurality of exposure shots are performed while the substrate 10 is moved, so that openings 22 are formed on the plurality of first electrodes 18 on the substrate 10, and the exposure shots are exposed. Due to the difference in energy, a phenomenon occurs in which one side angle and the other side angle of the opening 22 formed by the photolithography process are different from each other.
    [21] Such a phenomenon is that regular sores, called stitching, are expressed along the interface 32 of the exposure shot region 30 by the exposure shot as shown in FIG.
    [22] Lastly, the organic layer pattern 20 is hard-baked at a temperature of about 220 ° C. on the substrate 10 on which the opening 22 is formed to remove moisture in the organic layer pattern 20. do.
    [23] Subsequently, a mask is placed on the substrate 10 on which the opening 22 is formed to perform a deposition process. After forming a light emitting layer (not shown) made of organic materials such as anthracene, poly (p-phenylenevinylene) (PPV), and polythiophene (PT), applying a conductive material on the light emitting layer again, and then performing a second photolithography process. Form an electrode (not shown).
    [24] [0004] However, the conventional method for manufacturing an active matrix type organic light emitting display device includes an exposure shot when an opening is formed on a planarization film of an organic polymer material such as acrylic or polyimide on the substrate by a photolithography process. Due to the difference in exposure energy, one side angle and the other side angle of the opening are different from each other, and stitching is expressed.
    [25] Accordingly, the stitching is exposed on the screen of the completed organic light emitting display device, thereby degrading the performance of the organic light emitting display device.
    [26] SUMMARY OF THE INVENTION An object of the present invention is to provide a planarization film in which organic polymer materials such as acrylic and polyimide are used to planarize a substrate surface on which a first electrode connected to a thin film transistor functioning as a switching element is formed. The present invention provides a method of manufacturing an active matrix type organic light emitting display device which can prevent a sting phenomenon from occurring when an opening is formed, and an organic light emitting display device according thereto.
    [1] 1 is a cross-sectional view illustrating a method of manufacturing a conventional active matrix type organic light emitting display device.
    [2] 2 is a view for explaining a problem of a conventional organic light emitting display device.
    [3] 3A to 3D are cross-sectional views illustrating a method of manufacturing an active matrix type organic light emitting display device according to an embodiment of the present invention.
    [4] <Description of Symbols for Main Parts of Drawings>
    [5] 10, 40: substrate 12, 42; Shield
    [6] 14, 44: thin film transistors 16, 46: via holes
    [7] 18, 48: first electrode 20, 54: organic film pattern
    [8] 22, 56; Opening 30: exposure shot area
    [9] 32: boundary part 50a, 50b: guide pattern
    [10] 52: organic film
    [27] In order to achieve the above object of the present invention, a method of manufacturing an active matrix type organic light emitting display device according to the present invention includes forming a protective film on a substrate on which a thin film transistor is formed, and then connecting a via hole connected to the thin film transistor. Forming); Coating a conductive material on the substrate on which the via hole is formed, and then patterning a guide pattern to form a guide pattern around a first electrode connected to the via hole and a periphery of the first electrode at a predetermined distance from the first electrode; Forming an organic layer pattern on the substrate on which the first electrode and the guide pattern are formed, and then forming an organic layer pattern exposing the predetermined portion of the guide pattern; And deforming a shape of the organic film pattern by heat-treating the organic film pattern to a glass transition temperature (Tg) of the organic film or less.
    [28] Here, after the organic layer is formed, a soft-bake process may be further performed at 90 ° C to 110 ° C.
    [29] The organic layer may be formed of acryl or polyimide, and the heat treatment may be performed at 200 ° C. to 400 ° C.
    [30] In addition, an active matrix type organic light emitting display device according to the present invention includes a via hole provided in a protective film formed on a substrate on which a thin film transistor is formed; A first electrode connected to the thin film transistor through the via hole; A guide pattern formed around the first electrode at a position spaced apart from the first electrode by a predetermined distance; And an organic layer pattern disposed on the guide pattern to open the inner part of the guide pattern.
    [31] The organic layer may be formed of acryl or polyimide.
    [32] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    [33] 3A to 3D are cross-sectional views illustrating a method of manufacturing an active matrix type organic light emitting display device and an organic light emitting display device according to the embodiment of the present invention.
    [34] In the method of manufacturing an active matrix type organic light emitting display device according to the present invention, as shown in FIG. 3A, a thin film transistor 44 is formed on a substrate 40 by performing a series of semiconductor manufacturing processes. After forming the protective film 42 made of an oxide film on the substrate 40 on which the thin film transistor 44 is formed, the via hole 46 is formed by a photolithography process. Next, after the conductive material such as indium tin oxide (ITO) is completely coated on the substrate 40 on which the via holes 46 are formed, a well-known photolithography process involving exposure, development, and etching processes is performed. Guide patterns 50a and 50b are formed at the periphery of the first electrode 48 and the first electrode 48 at a predetermined distance from the first electrode 48.
    [35] In this case, in the photolithography process, a plurality of exposure shots are performed while the substrate 40 is moved to form a plurality of first electrodes 48 and guide patterns 50a and 50b on the substrate 40.
    [36] Subsequently, as shown in FIG. 3B, an organic polymer material such as acryl or polyimide is formed on the substrate 40 on which the first electrode 48 and the guide patterns 50a and 50b are formed. After forming the organic film 52 to planarize the upper portion of the substrate 40, the organic film 52 is soft-baked at a temperature of about 90 ° C. to 110 ° C., preferably about 95 ° C. do.
    [37] Next, as shown in FIG. 3C, the first electrode 48 is completely opened by a known photolithography process involving exposure, development, and etching, and the inner portions of the guide patterns 50a and 50b are opened. An organic film pattern 54 having an opening 56 is formed.
    [38] In this case, in the photolithography process, a plurality of exposure shots are performed by moving the substrate 40, so that openings 56 are formed on the plurality of guide patterns 50a and 50b on the substrate 40, respectively. Due to the difference in the exposure energy, a phenomenon occurs in which one side angle and the other side angle of the opening 56 formed by the photolithography process are different from each other, resulting in unevenness called stitching.
    [39] Finally, the organic film pattern 54 is heat-treated in a vacuum state below the glass transition temperature (Tg) of the organic film to deform the shape of the organic film pattern 54 so that the angle of the sides and the other sides of the opening 56 is different. Removes stains called stitching, which are manifested by the difference in.
    [40] In this case, when the organic layer pattern 54 is made of acryl, the heat treatment temperature is 200 ° C. to 400 ° C., and when the organic layer pattern 54 is made of polyimide, The heat treatment temperature is made of 200 ℃ to 400 ℃.
    [41] In addition, the lattice structure of the acrylic or polyimide forming the organic film pattern 54 is loosened by the heat treatment, so that the shape of the organic film pattern 54 on the guide pattern is deformed and flows to the edges of the guide patterns 50a and 50b. Get off. At this time, the organic film pattern 54 does not flow down to the protective film 43 made of an oxide film, the material of the protective film 43 and the organic film pattern 54 is an oxide film and a conductive material, the material of the material is different, the degree of wetness (Wettability) is different.
    [42] In addition, since the heat treatment process is performed in a vacuum state, the residual amount of moisture in the organic layer pattern 54 may be minimized as compared with a conventional hard-bake.
    [43] Subsequently, a mask is disposed on the substrate 40 on which the opening 56 is formed to perform a deposition process. After forming a light emitting layer (not shown) made of organic materials such as anthracene, poly (p-phenylenevinylene) (PPV), and polythiophene (PT), applying a conductive material on the light emitting layer again, and then performing a second photolithography process. Form an electrode (not shown).
    [44] As described above, according to the present invention, after the guide pattern is formed on the first electrode side, the organic film pattern is formed on the upper portion thereof, and the heat treatment is performed at a glass transition temperature (Tg) or lower, thereby deforming the shape of the organic film pattern. Will be removed.
    [45] Therefore, there is an effect that the quality of the organic light emitting display device completed by the stitching can be prevented from deteriorating.
    [46] Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.
    权利要求:
    Claims (6)
    [1" claim-type="Currently amended] Forming a via on the substrate on which the thin film transistor is formed, and forming a via hole connected to the thin film transistor;
    Coating a conductive material on the substrate on which the via hole is formed, and then patterning a guide pattern to form a guide pattern around a first electrode connected to the via hole and a periphery of the first electrode at a predetermined distance from the first electrode;
    Forming an organic layer pattern on the substrate on which the first electrode and the guide pattern are formed, and then forming an organic layer pattern exposing the predetermined portion of the guide pattern; And
    Heat-treating the organic layer pattern below the glass transition temperature (Tg) of the organic layer to deform the shape of the organic layer pattern;
    A method of manufacturing an active matrix type organic light emitting display device, comprising: a.
    [2" claim-type="Currently amended] The method of claim 1, wherein after forming the organic layer, a soft-bake process is performed at 90 ° C to 110 ° C.
    [3" claim-type="Currently amended] The method of claim 1, wherein the organic layer is formed of acryl or polyimide.
    [4" claim-type="Currently amended] The method of claim 1, wherein the heat treatment is performed at 200 ° C to 400 ° C.
    [5" claim-type="Currently amended] A via hole provided in the passivation layer formed on the substrate on which the thin film transistor is formed;
    A first electrode connected to the thin film transistor through the via hole;
    A guide pattern formed around the first electrode at a position spaced apart from the first electrode by a predetermined distance; And
    An organic layer pattern provided on the guide pattern to open the inner part of the guide pattern;
    An organic light emitting display device comprising: a light emitting device;
    [6" claim-type="Currently amended] 6. The active matrix type organic light emitting display device according to claim 5, wherein the organic layer is formed of acryl or polyimide.
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    同族专利:
    公开号 | 公开日
    KR100635044B1|2006-10-17|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-01-14|Application filed by 삼성에스디아이 주식회사
    2002-01-14|Priority to KR1020020002042A
    2003-07-22|Publication of KR20030061514A
    2006-10-17|Application granted
    2006-10-17|Publication of KR100635044B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020020002042A|KR100635044B1|2002-01-14|2002-01-14|Method for formming active matrix type organic electro luminescence display and organic electro luminescence display therby|
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